Abstract:Cubic silicon carbide (3C‐SiC) crystals are grown by the close space physical vapor transport (CS‐PVT) method while the growth temperature, pressure, and the nitrogen doping are varied during three different growth run series. The influence of the growth parameters on the step‐controlled surface morphology and stacking fault density is systematically investigated and discussed. A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Heteroepitaxial 3C-Sic on Si (1 0 0) with Flow-Modulated Carbonization Process Conditions

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

The Growth of Si on Sic Complex Substrate by Cvd

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Growth of SiC Buffers for Strained Si Film Epitaxy

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

The Mechanism of Void Formation in the Growth of 3C-Sic Thin Film on Si Substrate

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System