Abstract:In the step flow growth of SiC, the morphological instability will significantly affect the crystal quality. Exploring and mastering the intrinsic mechanism of crystal morphology instability from a microscopic point of view can provide theoretical references for practical production. The lattice kinetic Monte Carlo method is used to investigate the mechanism of step morphology instability during the epitaxial growth of 3C-SiC. Si and C are considered as independent atoms, and the Ehrlich-Schwoebel barrier and the diffusion barrier parallel to the step edge are all considered. The differences in atomic diffusion are mainly discussed, and the microscopic evolution of 3C-SiC crystals is simulated from the intrinsic properties and external factors affecting their morphology. And the relevant parameters measuring the morphology stability are calculated. The results show that the growth temperature mainly affects the atoms diffusion, which is a key external factor leading to the instability of step morphology. The difference in step crystal orientation can lead to morphological differences through the bonding energy at the edges of the step. The different diffusion barriers parallel to the step edge can lead to energy imbalance in the substrate, resulting in nucleation phenomenon, which is a potential factor for the instability of crystal morphology.

The Mechanism of Void Formation in the Growth of 3C-Sic Thin Film on Si Substrate

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Heteroepitaxial 3C-Sic on Si (1 0 0) with Flow-Modulated Carbonization Process Conditions

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Investigation on the Mechanism of Instability for Step Morphology During 3C-Sic (111) Vicinal Surface Epitaxial Growth

Growth Mechanism of Polycrystalline CsI(Tl) Films on Glass and Single Crystal Si Substrates

Deep Void Formation Mechanism in Si(100) During Its Carbonization Reaction with C2H2

Hexagonal voids and the formation of micropipes during SiC sublimation growth

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Homoepitaxial 6H-Sic Thin Films by Vapor-Liquid-Solid Mechanism