Abstract:Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct identification of C$_{i}$-related levels difficult. Recent literature has suggested to assign the so-called M center, often found in as-irradiated 4H-SiC, to charge state transitions of the C$_{i}$ defect in different configurations. In this work, we have introduced excess carbon into low-doped n-type 150 {\mu}m thick 4$H$-SiC epilayers by thermal annealing, with a pyrolyzed carbon cap on the sample surface acting as a carbon source. Because the layers exhibited initially low concentrations of carbon vacancies ([V$_{C}$] = 10$^{11}$ cm$^{-3}$), this enabled us to study the case of complete V$_{C}$ annihilation, and formation of defects due to excess carbon, i.e. carbon interstitials C$_{i}$ and their higher-order complexes. We report on the occurrence of several new levels upon C injection which are likely C$_{i}$-related. Their properties are different from those found for the M center, which points towards a different structural identity of the detected levels. This suggests the existence of a rich variety of C$_{i}$-related defects. The study will also help generating new insights into the microscopic process of V$_{C}$ annihilation during carbon injection processes.

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Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

Mechanism of SiC formation by Si surface carbonization using CO gas

The Mechanism of Void Formation in the Growth of 3C-Sic Thin Film on Si Substrate

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Ab initio study of the mechanism of carbonization of {111} Si-substrate at high temperature

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Mechanism of solid-state diffusion reaction in vacuum between metal (Fe, Ni, and Co) and 4H–SiC

Tight-binding molecular-dynamics study of amorphous carbon deposits over silicon surfaces

Study on the mechanism of helium platelets formation at low temperatures in SiC from the perspective of atomic diffusion

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Void-like Defects in Annealed Czochralski Silicon

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

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The Formation and Crystal Structure of Silicon Carbide

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process