Abstract:In this study, we investigated the relationship between the decarburization effect of the solid-state decarburization method for preparing silicon steel and the atomic diffusion behavior in the matrix, focusing on 1 mm thick Fe-0.18 wt% C-Si (1.5, 3.5 wt%) alloy strips as the research object. Solid-state decarburization experiments were carried out in an Ar-H2O-H2 atmosphere, and the self-diffusion behavior of C and Si in Fe-C-Si alloy system was simulated by molecular dynamics. The results show that the molecular dynamics simulation results are consistent with the decarburization experimental results. When the temperature is lower than 800 °C, the atoms maintain a compact bcc structure, so the migration rate of carbon is low. When the temperature rises, the atoms move violently, resulting in the destruction of the crystal structure. Because the atomic arrangement tends towards a disordered structure, the migration rate of C is high and the diffusion coefficient increases. The experimental results showed that the decarburization rate was accelerated. At the same temperature, the diffusion activation energy Q = 48.7 kJ·mol−1 of carbon in an Fe-3.5 wt% Si-C alloy matrix can be calculated. The diffusion activation energy of carbon Q = 47.3 kJ·mol−1 was calculated using a molecular dynamics simulation. When the content of Si is 3.5 wt% and 1.5 wt%, the diffusion series of Si can be expressed as D3.5Si, Si = 8.54 × 10−10 exp(−33,089.7/RT) m2/s and D1.5Si, Si = 2.06 × 10−9 exp(−46,641.5/RT) m2/s, respectively. When the Si content is 3.5 wt%, the diffusion coefficient of Si is larger. After diffusion to the near surface, it combines with the remaining O to form a continuous strip of SiO2. When the Si content is 1.5 wt%, the diffusion coefficient of Si is small. The remaining O diffuses in the matrix and will oxidize when encountering Si; it cannot aggregate in a highly-dispersed distribution. The lattice transition from face centered cubic lattice austenite to body centered cubic lattice ferrite occurred in the matrix of the thin strip. The diffusion coefficient of C in ferrite is much larger than that in austenite. Therefore, the decarburization rate suddenly increases before decarburization stagnation. With the increase in Si content, the diffusion activation energy of C decreases, which promotes the decarburization effect.

Mechanism of solid-state diffusion reaction in vacuum between metal (Fe, Ni, and Co) and 4H–SiC

Interfacial reaction mechanism and high temperature stability of heat-resistant steel and SiC under a vacuum environment

Kick-out Diffusion of Al in 4H-Sic: an Ab Initio Study

A Study of the Solid State Reaction Between Silicon Carbide and Iron

Diffusion Behavior of Carbon and Silicon in the Process of Preparing Silicon Steel Using Solid-State Decarburization

THE INTERFACIAL THERMAL STABILITY AND ELEMENT DIFFUSION MECHANISM OF SiCf/TC17 COMPOSITE

Phase Reactions and Diffusion Path of the SiC/Cr System

Self-diffusion Mechanisms Based Defect Complexes in MoSi2.

Reaction-Mechanism Between Sic Ceramic and Ti Foil in Solid-State Bonding

Interfacial behaviour of the high-entropy alloy CuCoCrFeNi and TC4 joint obtained by vacuum diffusion welding

Chemical Reactions in the Co–Si–C System

The interfacial stability of the coated-SiC/Fe couple

PROGRESSES OF STUDY OF SOLID STATE REACTION AND CONTROL OF SiC/METAL SYSTEM

Atomic Diffusion in the Interface of Fe/Si Prepared by Magnetron Sputtering

Deep Void Formation Mechanism in Si(100) During Its Carbonization Reaction with C2H2

Coating on SiC Surface by Solid State Reaction With Cr Powder

Interface structure and formation mechanism of diffusion-bonded SiC/Ni-Cr joint

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Interfacial reaction mechanism of SiC joints joined by pure nickel foil

Chemical Instability of Silicon Carbide in the Presence of Transition Metals

Silicide formation by solid-state diffusion in MO/Si multilayer thin films