Abstract:Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based counterparts1-4. Currently, most devices, such as metal-oxide-semiconductor field effect transistors, which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H-SiC because of its commercial availability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room-temperature, but a superior mobility and thermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals, however, has remained a challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique(TSSG), beyond what's expected by classic nucleation theory. This enables the steady growth of quality and large sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

Heteroepitaxial 3C-Sic on Si (1 0 0) with Flow-Modulated Carbonization Process Conditions

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Carbon Flux Assisted Graphene Layer Growth on 6H-Sic(000-1) by Thermal Decomposition

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

High quality and wafer-scale cubic silicon carbide single crystals

Effect Of Si/C Flux Ratio On The Growth Of 3c-Sic On Si (111) By Ssmbe

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer

Effect of Different Si/C Flux Ratios on the Growth of Sic on Si (111) by Ssmbe

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Mechanism of SiC formation by Si surface carbonization using CO gas

Homoepitaxial 6H-Sic Thin Films by Vapor-Liquid-Solid Mechanism