Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO 2 Thin Films

Quang-Phu Tran,Jau-Shiung Fang,Tsung-Shune Chin

DOI: https://doi.org/10.1007/s11664-015-4081-1

IF: 2.1

2016-01-01

Journal of Electronic Materials

Abstract:Boron-doped tin oxide (BTO) films, 0–5 at.% B, were prepared by sol–gel dip coating on a glass substrate. Dried precursor films were post-annealed at a temperature between 400°C and 750°C for 2 h. The obtained BTO thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible light (UV–Vis) spectrometry, a four-point probe, and Hall-effect and Seebeck-effect measurements. Optimal optical transmittance was achieved for post-annealed BTO thin film at 700°C. XRD results show a rutile SnO2 structure with a preferred (110) orientation for all the films. The grain size is 47–21 nm, which reduces with increasing B contents. The optical transmittance is 84.6–88.5% at a wavelength of 550 nm and optical band gap of 3.52–3.75 eV. Electrical resistivity is (3.4–8.2) × 10−3 Ω cm, and figure of merit (0.9–4.3) × 10−3 Ω−1. Carrier concentration is (0.97–7.4) × 1020 cm−3 and mobility (2.5–7.8) cm2 V−1 s−1. BTO film with 4 at.% B shows an optimal combination of properties. Conduction type changes from n- (undoped) to p- (1–4 at.% B), then to n-types (5 at.% B), as evidenced from Hall-effect and Seebeck-effect measurements. This is explained by doping-generated defects and phase separations of Sn3O4 and B2O3.