Effect of Sb doping on structural and photoelectric properties of SnO2 thin films

Yanfen Niu,Libing Duan,Xiaoru Zhao,Cong Han,Jiale Guo,Wangchang Geng
DOI: https://doi.org/10.1007/s10854-020-02877-y
2020-01-18
Abstract:Sb-doped SnO<sub>2</sub> (ATO) thin films were synthesized via the sol–gel dip-coating method on glass substrates. The XPS and XRD spectra showed that Sb atoms were successfully incorporated into the SnO<sub>2</sub> lattice and mostly existed in the form of Sb<sup>5+</sup> (~ 90%) in 1 at.% ATO thin films annealed in air and further annealed in vacuum. The transmittance spectra revealed that the average transmittance was more than 75% at the wavelength range of 325–700 nm. The average sheet resistancewas 14.05 kΩ/□ in 1 at.% ATO thin films annealing in air and much less than undoped SnO<sub>2</sub>. The electric property was better when ATO thin films were further annealing vacuum compared to annealing in air. The average sheet resistance and resistivity of 1 at.% ATO thin films were 2.42 kΩ/□ and 0.035 Ω cm, respectively. The PL showed that electrons transition from a shallow level of <i>V</i><sub>O</sub> to the minimum level of conduction band (CBM) increased with increasing of Sb<sup>3+</sup> ions. The maximum level of valence band (VBM) and CBM level positions were mainly affected by Sb<sup>3+</sup> and Sb<sup>5+</sup> energy levels after air annealing, respectively. The behavior of surface carrier transport was investigated after further vacuum annealing. The CBM–VBM level position mainly was affected by <i>V</i><sub>O</sub> energy level after further vacuum annealing. It was further proved by the Hall carrier concentration and the electrochemical impedance spectroscopy (EIS).
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