Abstract:One-step metal-assisted chemical etching (MACE) was used to fabricate porous silicon nanowire arrays. Also, the effects of doping level, AgNO3 concentration, and HF concentration on the morphology and structure of porous silicon nanowire were investigated. The results show that the higher doping level is beneficial for etching the silicon wafer and forming silicon nanowire arrays. This is because the higher doping level introduces more impurities and defects on the surface of the silicon wafer, and at the same time, the Schottky barrier between the silicon wafer with the higher doping level and the solution is lower. Thus, the silicon wafer is easier to oxidate to form nanowire arrays. The AgNO3 concentration plays a critical role in the fabrication of the porous silicon nanowire arrays during the one-step MACE process. If AgNO3 concentration is too low or too high, corrosion pits and collapsed clusters of nanowires could form on the surface of the silicon wafer. When AgNO3 concentration was 0.02 mol·L-1, silicon nanowires grew and became longer, eventually forming a porous array of silicon nanowire. In the meantime, as silicon nanowires grew, capillary stress between nanowires caused agglomeration at the top of some nanowires. Furthermore, when HF solution concentration exceeded 4.6 mol·L-1, the length of silicon nanowire increased with increasing HF concentration. Furthermore, a porous structure was formed on top the silicon nanowire, and the porosity of the silicon nanowires increased with increasing HF concentration. This was due to a large number of Ag+ random nucleations at the top of the nanowires, and lateral etching of the silicon nanowires occurred. In the end, the formation process of the porous silicon nanowires is explained by a model based on the experimental phenomena. It is attributed to the deposition of silver ions and the oxidation of dissolved silicon substrates.

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Optimization of anodic current density for growth of thick p-type macropore porous silicon

Microstructure and oxidation of porous silicon

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Al-assisted Anodic Etched Porous Silicon

Kelvin Probe Force Microscopy Study on Anodization-Related Variations of Porous Silicon Nanostructures Combined with Photoluminescence and Raman Scattering

Effects Of Anodization Current Density And Time On Porous Silicon Morphology And Electron Emission Characteristics

Corrosion Mechanism and Surface Passivation Strategies of Polycrystalline Silicon Electrodes

Chemical Etching and Anodic Oxidation of (100) Silicon in Alkaline Solution: the Role of Applied Potential

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Investigations on the Effect of Current Density on SiO/Si Composite Electrodes

Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Influence of formaldehyde on the electrochemistry and chemical etching of silicon in alkaline solutions

Silicon Content Design of CrSiN Films for Good Anti-Corrosion and Anti-Wear Performances in NaOH Solution

Mitigation of Volumetric Expansion in Silicon Anodes Via Engineered Porosity: Electrochemical Performances and Stress Distribution Implication

I-V characterization study of porous silicon formation by doubled-cell electrochemical etching

The Mechanism of the Electrochemical Oxidation in the Constant Current Mode of the Porous Silicon

Anodizing Protection for SiCp/2024Al Composite Material

Porous Silicon Nanowire Arrays Fabrication Through One-Step Metal-Assisted Chemical Etching

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio