Abstract:In order to clarify the mechanism of the electrochemical oxidation (ECO) in the constant current mode of porous silicon (PS), the ECO process of PS in different concentration of electrolyte was studied in detail. According to the experiment facts, a hypothesis based on the mechanism of 'electrical break' was first proposed to explain the oxidation interruption that tends to occur in the lower concentration of the electrolyte. The experiment results show that the bottom of the porous layer is preferential oxidized in the ECO process since the oxidation process was governed by the holes injected from the substrate and supplied to the silicon-electrolyte interface. The appearance of the oxidation interruption during the ECO process is due to the electrical isolation between the Si substrate and electrolyte by the formation of a continuous oxide film at the bottom of the porous layer. The results obtained in this work indicated that it is easy to control the thickness of the oxide film by adjusting the concentration of electrolyte, which made the ECO method appears to be more attractive when incomplete oxidation is required. This present work is also contributes to the fundamental understanding of the ECO mechanism in the constant current mode of the PS material.

Microstructure and oxidation of porous silicon

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

The Influence of Microstructure on Optical Properties of Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Microstructures and Emission Characteristics of Porous Silicon Films

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Anodic characteristic during anodizing of electron-beam evaporation Aluminum film on Si substrate

Improving the stability of porous silicon photoluminescence by damp oxidation

The Mechanism of the Electrochemical Oxidation in the Constant Current Mode of the Porous Silicon

Studies on microstructure and photoluminescence property of porous silicon

An Investigation of the Properties of Silicon Oxide Prepared by Oxidation of Silicon in Chlorine-Containing Ambients at 850°C

Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

Influence Of Anodization Current Density On Preparation And Corrosion Of N-Type Macroporous Silicon In 1.0 M Naoh

Effects Of Anodization Current Density And Time On Porous Silicon Morphology And Electron Emission Characteristics

Ultraviolet light emission from oxidized porous silicon

Kelvin Probe Force Microscopy Study on Anodization-Related Variations of Porous Silicon Nanostructures Combined with Photoluminescence and Raman Scattering

Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure