Abstract:We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF (48wt.%) : H 2 O = 1:1. After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the 476.5 nm line, with a power of 20 mW, from an argon ion laser. A few minutes later we observed its photoluminescence (PL) spectrum under the same excitation power and then repeated the process of chemical etching followed by laser illumination, many times on the same specimen. For comparison, some spots on one PSL were etched for different times then to obtain a PL spectrum each spot was illuminated once by laser. The PL spectra of PSLs treated by the above two processes are very different. The PL band of the PSL treated by etching and illumination alternatively exhibited a continuous increase in intensity along with a blue shift for the first 5 repetitions. After reaching a maximum, the PL band exhibited a continuous reduction in intensity along with a red shift. Comparing the PL spectra for the different spots of the PSL treated for different etching times, the energy positions of their PL bands were almost the same. Only the intensity increased slightly with the time of etching. We think the blue and red shifts of the PL band for the PSL treated by etching combined with illumination are related to the quantum size effect of the PSL.

Kelvin Probe Force Microscopy Study on Anodization-Related Variations of Porous Silicon Nanostructures Combined with Photoluminescence and Raman Scattering

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Al-assisted Anodic Etched Porous Silicon

Studies on microstructure and photoluminescence property of porous silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Dynamic and Photoluminescence Behavior of Nanocrystallites and Bulk Porous Silicon Texture

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Microstructure and oxidation of porous silicon

Influence Of Anodization Current Density On Preparation And Corrosion Of N-Type Macroporous Silicon In 1.0 M Naoh

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Annealing and amorphous silicon passivation of porous silicon with blue light emission

Luminescence and photoconductivity properties of porous polycrystalline silicon

Hierarchical Nanostructuring of Porous Silicon with Electrochemical and Regenerative Electroless Etching

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

Transmission electron microscopy studies of photochemically etched porous silicon

Origin of Multiple-Peak Photoluminescence Spectra of Light-Emitting Porous Silicon