Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Dynamic and Photoluminescence Behavior of Nanocrystallites and Bulk Porous Silicon Texture

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Luminescence and photoconductivity properties of porous polycrystalline silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

On the Role of the Pore Filling Medium in Photoluminescence from Photochemically Etched Porous Silicon

Annealing and amorphous silicon passivation of porous silicon with blue light emission

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Photoluminescence from Silicon nanoparticles embedded in ammonium silicon hexafluoride

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Intense And Stable Blue-Violet Emission From Porous Silicon Modified With Alkyls

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

Studies on microstructure and photoluminescence property of porous silicon