Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

An Investigation of the Properties of Silicon Oxide Prepared by Oxidation of Silicon in Chlorine-Containing Ambients at 850°C

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Investigation of the oxidation mechanism of Si-Al2O3-fused mullite containing Ti2O3 composite

Investigation of Selective Oxidation During Cooling of Hot-Rolled Iron-Manganese-silicon Alloys

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Microstructure and oxidation of porous silicon

Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Growth Rate and Characterization of Silicon Oxide Films Grown in N 2 O Atmosphere in a Rapid Thermal Processor

Oxidation of Silicon Particles Suspended in a Mullite Matrix with Dual-Mode Vacancy Diffusion of Oxygen

Passivation of Porous Silicon by Wet Thermal Oxidation

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Preparation and Characterization of Porous SiC Ceramics by Oxidation Bonding Method