Abstract:The silicon suboxide SiOx (x < 2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide layer of up to 1 μm, which was grown on silicon during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. It is a stable oxide exhibiting light emission from 400 to 1700 nm offering scalable and cost-effective large area processing capability. The measurement results reveal interesting properties, which are required to be understood clearly before proceeding with any suitable application. The results have been analyzed using state-of-the-art physical and electrical characterization techniques such as ellipsometry, AFM, SEM, FTIR, photoluminescence lifetime and resistive switching measurements to determine structural, optical and electrical properties. At 300 K the carrier lifetime measurements reveal the lifetime values ranging from about few tens of picosecond up to 4500 picoseconds. Scanning probe analysis indicate a surface roughness of about 30 Å. Resistive memory forming was observed also in these layers at relatively low power thresholds. We provide a comprehensive description of the physical and electrical properties in order to clarify the origin of the observed features. The wavelength dependent real and the imaginary dielectric functions provided useful insights on optical properties. A lookout is given for the possible applications of this special SiOx dielectric oxide layer.

Electro-oxidation of p-silicon in fluoride-containing electrolyte: a physical model for the regime of negative differential resistance

A Stochastic Model for Current and Voltage Oscillations of the Si Electrode

Porous silicon formation and electropolishing

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

A Mathematical Model for Silicide Oxidation

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system

Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study

Suppressing the Side Reaction by a Selective Blocking Layer to Enhance the Performance of Si-Based Anodes

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface

Electrochemical Behavior of Silicon in the (Nacl-Kcl-naf-sio 2 ) Molten Salt

Chemical Etching and Anodic Oxidation of (100) Silicon in Alkaline Solution: the Role of Applied Potential

Selective Etching of Silicon in Aqueous KOH

A comprehensive model of high-concentration phosphorus diffusion in silicon

Evaluation of Electrolytes for Si-Based Negative Electrodes

A Mott-Schottky analysis of mesoporous silicon in aqueous electrolyte solution by electrochemical impedance spectroscopy

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

Revealing the crystal structures and relative dielectric constants of fluorinated silicon oxides

Anion-incorporation Model Proposed for Interpreting the Interfacial Physical Origin of the Faradaic Pseudocapacitance Observed on Anodized Valve Metals--with Anodized Titanium in Fluoride-Containing Perchloric Acid As an Example.

Corrosion Mechanism and Surface Passivation Strategies of Polycrystalline Silicon Electrodes