Abstract:Many nanoporous Si structures, including those formed by common electrochemical etching procedures, produce a uniformly etched nanoporous surface. If the electrochemical etch rate is slowed down, details of the etch process can be explored and process parameters may be varied to test hypotheses and obtain controlled nanoporous and defect structures. For example, after electrochemical etching of heavily n-doped (R = 0.05-0.5 Omega.cm) silicon (100 single crystals at a current density of 10 mA cm(-2) in buffer oxide etch (BOE) electrolyte solution, defect craters containing textured nanopores were observed to occur in ring-shaped patterns. The defect craters apparently originate at the hydrogen/BOE bubble interface, which forms during hydrogen evolution in the reaction. The slower hydrogen evolution due to low current density and high BOE viscosity allows sufficient bubble residence time so that a high defect density appears at the bubble edges where local reaction rates are highest. Current-carrying Si-OH species are most likely responsible for the widening of the craters. Reducing the defect/doping density in silicon lowers the defect concentration and thereby the density of nanopores. Measurements of photoluminescence lifetime and intensity show a distinct feature when the few nanopores formed at the ring edges are isolated from each other. Overall features observed in the photoluminescence intensity by XPS strongly emphasize the role of surface oxide that influences these properties. Copyright (c) 2005 John Wiley & Sons, Ltd.

Morphological and Optical Properties of Silicon Nanoholes Produced by Pt-nanoparticles Assisted Chemical Etching

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate Via Pt Nanoparticles-Assisted Chemical Etching

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

N-Type Area of PN Junction Etched in BOE Solution

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Manipulations of Light by Ordered Micro-Holes in Silicon Substrates.

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Fabrication and Photocatalytic Properties of Silicon Nanowires by Metal-Assisted Chemical Etching: Effect of H 2 O 2 Concentration

Tuning the photoluminescence of porous silicon nanowires by morphology control

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Characterization of nanoporous silicon layer to reduce the optical losses of crystalline silicon solar cells

Platinum-Particle-Assisted Etching of Low-, Moderately-, and Highly-Doped p-Type Silicon: Change of Composite Porous Structure

Nanosphere Lithography: Fabrication of Periodic Arrays of Nanoholes

Effect of silicon resistivity on its porosification using metal induced chemical etching

Optimization of Porous Silicon Structure As Antireflective Material

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Hierarchical Nanostructuring of Porous Silicon with Electrochemical and Regenerative Electroless Etching