Effect of silicon resistivity on its porosification using metal induced chemical etching

Shailendra K Saxena,Gayatri Sahu,P.K. Sahoo,Pankaj R. Sagdeo,Rajesh Kumar
DOI: https://doi.org/10.1088/2053-1591/2/3/036501
2014-08-19
Abstract:A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been prepared using metal induced etching (MIE) technique from two different Si wafers having two different resistivities. It is observed that porous Si containing well aligned Si nanowires are formed from high resistivity (1-20 $\Omega$cm) Si wafer whereas interconnected pores or cheese like structures are formed from low resistivity (0.02 $\Omega$cm ) Si wafers after MIE. An explanation for the different porosification processes has also been proposed based on the initial doping level where number of dopants seems to be playing an important role on the etching process. Visible photoluminescence have been observed from all the porous samples possibly due to quantum confinement effect.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the differences in the porous structures formed during the metal - induced chemical etching (MIE) process of silicon (Si) wafers with different resistivities and their causes. Specifically, the author hopes to reveal the influence of the initial doping level on the etching process by comparing the surface morphology and photoluminescence characteristics of high - resistivity (1 - 20 Ωcm) and low - resistivity (0.02 Ωcm) silicon wafers after MIE treatment. ### Main problems: 1. **What are the differences in the porous structures formed after MIE treatment of silicon wafers with different resistivities?** - A well - arranged array of silicon nanowires (Si NWs) is formed on high - resistivity silicon wafers. - Interconnected pores or cheese - like structures are formed on low - resistivity silicon wafers. 2. **What are the causes of these differences?** - The initial doping level (i.e., resistivity) has an important influence on the etching process. There are fewer dopants in high - resistivity silicon wafers, causing Ag ions to mainly concentrate in the vertical direction to form nanowires; while there are more dopants in low - resistivity silicon wafers, causing Ag ions to diffuse to the sidewalls, forming non - vertical pores and finally an interconnected pore structure. 3. **What are the photoluminescence characteristics of these porous structures?** - All porous samples exhibit visible photoluminescence, which may be caused by the quantum confinement effect. The photoluminescence peak position of high - resistivity samples is higher, indicating a stronger quantum confinement effect; while the photoluminescence peak position of low - resistivity samples is lower, indicating a weaker quantum confinement effect. ### Summary: This research aims to reveal the influence of the initial doping level on the etching process and the final structure by comparing the porous structures and photoluminescence characteristics of silicon wafers with different resistivities after MIE treatment. This helps to understand the key factors in the MIE technology for preparing silicon nanostructures with specific morphologies and provides a theoretical basis for optimizing process parameters.