Abstract:Many nanoporous Si structures, including those formed by common electrochemical etching procedures, produce a uniformly etched nanoporous surface. If the electrochemical etch rate is slowed down, details of the etch process can be explored and process parameters may be varied to test hypotheses and obtain controlled nanoporous and defect structures. For example, after electrochemical etching of heavily n-doped (R = 0.05-0.5 Omega.cm) silicon (100 single crystals at a current density of 10 mA cm(-2) in buffer oxide etch (BOE) electrolyte solution, defect craters containing textured nanopores were observed to occur in ring-shaped patterns. The defect craters apparently originate at the hydrogen/BOE bubble interface, which forms during hydrogen evolution in the reaction. The slower hydrogen evolution due to low current density and high BOE viscosity allows sufficient bubble residence time so that a high defect density appears at the bubble edges where local reaction rates are highest. Current-carrying Si-OH species are most likely responsible for the widening of the craters. Reducing the defect/doping density in silicon lowers the defect concentration and thereby the density of nanopores. Measurements of photoluminescence lifetime and intensity show a distinct feature when the few nanopores formed at the ring edges are isolated from each other. Overall features observed in the photoluminescence intensity by XPS strongly emphasize the role of surface oxide that influences these properties. Copyright (c) 2005 John Wiley & Sons, Ltd.

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate Via Pt Nanoparticles-Assisted Chemical Etching

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Morphological and Optical Properties of Silicon Nanoholes Produced by Pt-nanoparticles Assisted Chemical Etching

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

N-Type Area of PN Junction Etched in BOE Solution

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Platinum-Particle-Assisted Etching of Low-, Moderately-, and Highly-Doped p-Type Silicon: Change of Composite Porous Structure

Effect of Deposition and Treatment Conditions on Growth of Nanometer Ptsi Heterostructure

Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

Preparation of Hydrophobic Porous Silicon by Metal-Assisted Etching with Pd-Catalyst

The formation of SiNWs depending on the topology of the metal-catalyst film in the process of metal-assisted chemical etching of c-Si

Deposition of Platinum Nanoparticles on P-Type Macroporous Silicon Wall

Ni(Pt)Si Thin Film Formation and Its Electrical Characteristics with Si Substrate

Nanosphere Lithography: Fabrication of Periodic Arrays of Nanoholes

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

Nanopatterning of Si surfaces by normal incident He plasma irradiation

Metal-particle-induced, Highly Localized Site-Specific Etching of Si and Formation of Single-Crystalline Si Nanowires in Aqueous Fluoride Solution.

Tuning the photoluminescence of porous silicon nanowires by morphology control

Growth of Single-Walled Carbon Nanotubes on Porous Silicon

Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms