Abstract:The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO 2 , which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

Growth of Single-Walled Carbon Nanotubes on Porous Silicon

Ultrafast growth of single-crystalline Si nanowires

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Confined Growth of Carbon Nanotubes in Nanocutting Channel on Highly Oriented Pyrolytic Graphite

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports.

GROWTH CARBON NANOTUBES DIRECTLY ON PRISTINE SILICON SUBSTRATES

Discrete Growth of Single-walled Carbon Nanotubes on Surfaces

Growth Of High-Quality Single-Wall Carbon Nanotubes Without Amorphous Carbon Formation

Selective Growth of Carbon Nanotube on Silicon Substrates

Controlling Growth of Aligned Carbon Nanotubes from Porous Silicon Templates

Metal-catalyst-free growth of single-walled carbon nanotubes.

High-Density Growth of Single-Wall Carbon Nanotubes on Silicon by Fabrication of Nanosized Catalyst Thin Films

Spatial confined growth of carbon nanotubes in pore channels of microporous ceramic supports with improved filtration efficiency

Carbon nanotube arrays on silicon substrates and their possible application

Three Separated Growth Sequences of Vertically-Aligned Carbon Nanotubes on Porous Silicon: Field Emission Applications

The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

Controlling Growth and Field Emission Property of Aligned Carbon Nanotubes on Porous Silicon Substrates

Critical Oxide Thickness for Efficient Single-walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers

Silicon Nanowires, Catalytic Growth and Electrical Characterization