Abstract:The ability to controllably obtain ordered carbon nanotube1, 2 architectures is important to fundamental characterizations and potential applications of novel molecular wires. Controlled synthesis involving chemical vapor deposition (CVD) has been an effective strategy to order multiwalled nanotubes (MWNTs) on surfaces. 3-5 For instance, MWNTs self-oriented perpendicular to substrates and assembled into regular arrays were demonstrated recently. 5 Single-walled nanotubes (SWNTs) are true molecular wires with their diameters in the range of∼ 1-5 nm such that a SWNT is either metallic, semiconducting, or semimetallic depending on chirality. 6 Synthesis of structurally perfect SWNTs has been demonstrated by a methane CVD method. 7, 8 This synthetic approach has allowed individual SWNT wires to be grown from controlled surface sites by catalyst patterning9 and has led to interconnecting SWNT electrical devices. 10, 11 However, obtaining SWNTs in aligned orientations perpendicular or parallel to surfaces has not been possible thus far. In this communication, we report the first directed growth of single-walled nanotubes parallel to the plane of a silicon substrate. The SWNTs are suspended bridges grown from catalyst material placed on top of regularly patterned silicon tower structures. The key synthetic step in our approach involves developing a series of liquid-phase catalyst precursor materials. The liquid materials allow for uniform film formation and large-scale catalyst patterning. Contact printing techniques were used to selectively deposit catalyst precursor materials on top of the silicon tower arrays. Calcination led to the …

Metal-catalyst-free growth of single-walled carbon nanotubes.

Metal-catalyst-free growth of single-walled carbon nanotubes

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Growth Of High-Quality Single-Wall Carbon Nanotubes Without Amorphous Carbon Formation

Growth velocity and direct length-sorted growth of short single-walled carbon nanotubes by a metal-catalyst-free chemical vapor deposition process.

High-Density Growth of Single-Wall Carbon Nanotubes on Silicon by Fabrication of Nanosized Catalyst Thin Films

Thin-Film Metal Catalyst For The Production Of Multi-Wall And Single-Wall Carbon Nanotubes

How Catalysts Affect the Growth of Single-Walled Carbon Nanotubes on Substrates

Direct Growth of Single-Walled Carbon Nanotubes without Metallic Residues by Using Lead as a Catalyst

Discrete Growth of Single-walled Carbon Nanotubes on Surfaces

Manganese-catalyzed surface growth of single-walled carbon nanotubes with high efficiency

Copper Catalyzing Growth of Single-Walled Carbon Nanotubes on Substrates

Directed growth of free-standingsingle-walled carbon nanotubes

Selective Growth of Semiconducting Single-Wall Carbon Nanotubes Using SiC As a Catalyst

Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes

Growth of carbon nanotubes over non-metallic based catalysts: A review on the recent developments

Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports.

Catalyst Regeneration and Multicycle Growth of High Purity and Yield Semiconducting Single-Walled Carbon Nanotubes

Growth of Single-Walled Carbon Nanotubes from Discrete Catalytic Nanoparticles of Various Sizes

Controlling the growth of single-walled carbon nanotubes on surfaces using metal and non-metal catalysts