Directed growth of free-standingsingle-walled carbon nanotubes
Alan M Cassell, Nathan R Franklin, Thomas W Tombler, Emory M Chan, Jie Han, Hongjie Dai
1999-09-01
Abstract:The ability to controllably obtain ordered carbon nanotube1, 2 architectures is important to fundamental characterizations and potential applications of novel molecular wires. Controlled synthesis involving chemical vapor deposition (CVD) has been an effective strategy to order multiwalled nanotubes (MWNTs) on surfaces. 3-5 For instance, MWNTs self-oriented perpendicular to substrates and assembled into regular arrays were demonstrated recently. 5 Single-walled nanotubes (SWNTs) are true molecular wires with their diameters in the range of∼ 1-5 nm such that a SWNT is either metallic, semiconducting, or semimetallic depending on chirality. 6 Synthesis of structurally perfect SWNTs has been demonstrated by a methane CVD method. 7, 8 This synthetic approach has allowed individual SWNT wires to be grown from controlled surface sites by catalyst patterning9 and has led to interconnecting SWNT electrical devices. 10, 11 However, obtaining SWNTs in aligned orientations perpendicular or parallel to surfaces has not been possible thus far. In this communication, we report the first directed growth of single-walled nanotubes parallel to the plane of a silicon substrate. The SWNTs are suspended bridges grown from catalyst material placed on top of regularly patterned silicon tower structures. The key synthetic step in our approach involves developing a series of liquid-phase catalyst precursor materials. The liquid materials allow for uniform film formation and large-scale catalyst patterning. Contact printing techniques were used to selectively deposit catalyst precursor materials on top of the silicon tower arrays. Calcination led to the …
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