Abstract:Understanding surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures is crucial to fabricate high-performance SiC-based devices. However, the role of oxygen in the evolution mechanism of SiC surface at atomic scale has not been comprehensively elaborated. Here, we reveal the manipulation effect of oxygen on the competitive growth of thermal oxidation SiO2 (TO-SiO2) and thermal chemical vapor deposition SiO2 (TCVD-SiO2) on the 4H-SiC substrate at 1500 °C. TO-SiO2 is formed by the thermal oxidation of SiC, in which the substrate undergoes layer-by-layer oxidation, resulting in an atomically flat SiC/TO-SiO2 interface. TCVD-SiO2 growth includes the sublimation of Si atoms, the reaction between sublimated Si atoms and reactive oxygen, and the adsorption of gaseous Si x O y species. A relatively high sublimation rate of Si atoms at SiC atomic steps causes the transverse evolution of the nucleation sites, leading to the formation of nonuniform micron-sized pits at the SiC/TCVD-SiO2 interface. The low oxygen concentration favors TCVD-SiO2 growth, whose crystal quality is much better than that of TO-SiO2 due to the high surface mobility in the thermal CVD process. We further achieve the epitaxial growth of graphene on 4H-SiC in an almost oxygen-free reaction atmosphere. Additionally, ReaxFF reactive molecular dynamic simulation results illustrate that the decrease in oxygen concentration can promote the growth kinetics of SiO2 on single crystal SiC from being dominated by thermal oxidation to being dominated by thermal CVD.

Critical Oxide Thickness for Efficient Single-walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers

Ultrafast growth of single-crystalline Si nanowires

Silicon Oxide Thickness-Dependent Growth of Carbon Nanotubes

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Thin-Film Metal Catalyst For The Production Of Multi-Wall And Single-Wall Carbon Nanotubes

High-Density Growth of Single-Wall Carbon Nanotubes on Silicon by Fabrication of Nanosized Catalyst Thin Films

Growth Of High-Quality Single-Wall Carbon Nanotubes Without Amorphous Carbon Formation

Diameter controlled growth of single-walled carbon nanotubes from SiO2 nanoparticles

Growth of Single-Walled Carbon Nanotubes on Porous Silicon

Selective Growth of Carbon Nanotube on Silicon Substrates

Narrow-chirality distributed single-walled carbon nanotube synthesized from oxide promoted Fe–SiC catalyst

Possible Tactics to Improve the Growth of Single-Walled Carbon Nanotubes by Chemical Vapor Deposition

Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes

SiO2-promoted growth of single-walled carbon nanotubes on an alumina supported catalyst

Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

GROWTH CARBON NANOTUBES DIRECTLY ON PRISTINE SILICON SUBSTRATES

Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports.

Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

Growth velocity and direct length-sorted growth of short single-walled carbon nanotubes by a metal-catalyst-free chemical vapor deposition process.

Metal-catalyst-free growth of single-walled carbon nanotubes.