Abstract:The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO 2 , which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

Silicon Oxide Thickness-Dependent Growth of Carbon Nanotubes

Critical Oxide Thickness for Efficient Single-walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers

Diameter controlled growth of single-walled carbon nanotubes from SiO2 nanoparticles

Direction-Selective and Length-Tunable In-Plane Growth of Carbon Nanotubes

Selective Growth of Carbon Nanotube on Silicon Substrates

Diameter Dependent Growth Mode of Carbon Nanotubes on Nanoporous SiO2 Substrates

GROWTH CARBON NANOTUBES DIRECTLY ON PRISTINE SILICON SUBSTRATES

Growth Of High-Quality Single-Wall Carbon Nanotubes Without Amorphous Carbon Formation

Growth of carbon nanotubes on SiO2-particle substrates via CVD method

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Synthesis of Silicon Nanotubes on Porous Alumina Using Molecular Beam Epitaxy

Growing pillars of densely packed carbon nanotubes on Ni-coated silica

Growth of Single-Walled Carbon Nanotubes on Porous Silicon

Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition

Lift-up Growth of Aligned Carbon Nanotube Patterns

Large-area silica nanotubes with controllable geometry on silicon substrates

Bottom-Up Growth of Carbon Nanotube Multilayers: Unprecedented Growth

High-Density Growth of Single-Wall Carbon Nanotubes on Silicon by Fabrication of Nanosized Catalyst Thin Films

Growth of SiC Nanorods Prepared by Carbon Nanotubes-Confined Reaction

Controllable Synthesis and Growth Model of Amorphous Silicon Nanotubes with Periodically Dome-Shaped Interiors

Substrate-Site Selective Growth of Aligned Carbon Nanotubes