Growth of carbon nanotubes on SiO2-particle substrates via CVD method

Chao LIU,Zheng-cao LI,Zheng-jun ZHANG,Yang YUE,Ya ZHOU
DOI: https://doi.org/10.3969/j.issn.1000-6281.2007.03.004
2007-01-01
Abstract:By dispersing the solution of silica particles in alcohol on the carefully cleaned silicon wafer, substrates with a curved surface were obtained for growing carbon nanotubes. The growth method employed in this study is chemical vapor deposition from a mixture of ferrocene and xylene, by which a strong selective growth from SiO2 to Si was observed. In this study, carbon nanotubes also preferred to grow on SiO2 , although the silica was in the form of spherical particle instead of planar film. On this curved-surface substrate, carbon nanotubes could grow into either carbon nanotube bundles or carbon nanotube balls at different deposition temperatures. By examining the change of the morphology of SiO2 particles annealed at different temperatures, the relationship between the morphology of the carbon nanotube products and the deposition temperature was also investigated.
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