Abstract:The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO 2 , which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

Substrate-Site Selective Growth of Aligned Carbon Nanotubes

Selective Growth of Carbon Nanotube on Silicon Substrates

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Film growth of pillars of multi-walled carbon nanotubes

Preferential Growth of Carbon Nanotubes/Nanofibers Using Lithographically Patterned Catalysts

GROWTH CARBON NANOTUBES DIRECTLY ON PRISTINE SILICON SUBSTRATES

Selective Synthesis Combined with Chemical Separation of Single-Walled Carbon Nanotubes for Chirality Selection

Control The Relative Length Of Carbon Nanotubes From Site To Site On One Silicon Substrate

Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

Synthesis of Vertically Aligned Carbon Nanotube Arrays on Silicon Substrates

Buliding microstructures of organized carbon nanotubes by chemical vapor deposition

Direction-Selective and Length-Tunable In-Plane Growth of Carbon Nanotubes

Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

Uniform Patterned Growth of Carbon Nanotubes Without Surface Carbon

Selecting the Growth Sites of Carbon Nanotubes on Silicon Substrates by Ion Implantation

Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition

Layered Growth of Aligned Carbon Nanotubes Arrays on Silicon Wafers

Growth Of High-Quality Single-Wall Carbon Nanotubes Without Amorphous Carbon Formation

Patterned Growth of Well-aligned Carbon Nanotube Arrays on Quartz Substrates by Chemical Vapor Deposition

Selective Growth of Single‐walled Carbon Nanotubes using Cobalt Disilicide

Tunable Self‐Assembly of Carbon Nanotubes on Silica Surface