Abstract:Based on the analysis of catalyst particle formation and carbon nanotube (CNT) array growth process in floating catalyst chemical vapor deposition (CVD), delicately controlled gaseous carbon sources and catalyst precursors were introduced into the reactor for the controllable growth of CNT array. The low feeding rate of ferrocene was realized through low-temperature sublimation. With less ferrocene introduced into the reactor, the collision among the in situ formed iron atoms decreased, which led to the formation of smaller catalyst particles. The mean diameter of the CNT array, grown at 800(o)C, decreased from 41 to 31 nm when the ferrocene-sublimed temperature reduced from 80 to 60(o)C. Furthermore, low growth temperature was adopted in synthesis, through the modulation of the CNT diameter, by controlling the sintering of catalyst particles and the collision frequency. When the growth temperature was 600(o)C, the as-grown CNTs in the array were with a mean diameter of 10.2 nm. If propylene was used as carbon source, the diameter can be modulated in similar trends. The diameter of CNT can be modulated by the parameter of the operation using the same substrate and catalyst precursor without other equipment or previous treatment. Those results provide the possibility for delicately controllable synthesis of CNT array via simple floating catalyst CVD.

Control The Relative Length Of Carbon Nanotubes From Site To Site On One Silicon Substrate

Substrate-Site Selective Growth of Aligned Carbon Nanotubes

GROWTH CARBON NANOTUBES DIRECTLY ON PRISTINE SILICON SUBSTRATES

Modulating the Diameter of Carbon Nanotubes in Array Form Via Floating Catalyst Chemical Vapor Deposition

Controlling the Diameter of Single-Walled Carbon Nanotubes by Improving the Dispersion of the Uniform Catalyst Nanoparticles on Substrate

Film growth of pillars of multi-walled carbon nanotubes

Using 0-dimensional silica to control diameter and density of carbon nanotubes

Study of Controlled Growth of Carbon Nanotubes in Microstructures at Low Temperature

Direction-Selective and Length-Tunable In-Plane Growth of Carbon Nanotubes

Selecting the Growth Sites of Carbon Nanotubes on Silicon Substrates by Ion Implantation

Selective Growth of Carbon Nanotube on Silicon Substrates

Precise control of the number of walls formed during carbon nanotube growth using chemical vapor deposition

Controlling Growth of Aligned Carbon Nanotubes from Porous Silicon Templates

Buliding microstructures of organized carbon nanotubes by chemical vapor deposition

Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition

Diameter controlled growth of single-walled carbon nanotubes from SiO2 nanoparticles

Growth of Single-Walled Carbon Nanotubes from Discrete Catalytic Nanoparticles of Various Sizes

Select Pathways to Carbon Nanotube Film Growth

CVD Growth of N-Doped Carbon Nanotubes on Silicon Substrates and Its Mechanism

Controllable Synthesis and Growth Model of Amorphous Silicon Nanotubes with Periodically Dome-Shaped Interiors

Controlled Growth of a Single Carbon Nanotube on an AFM Probe