Selecting the Growth Sites of Carbon Nanotubes on Silicon Substrates by Ion Implantation

Yang Yue,Zhengjun Zhang,Chao Liu
DOI: https://doi.org/10.1063/1.2217255
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Surface modification by xenon ion implantation could significantly influence the growth of carbon nanotubes on silicon substrates. By chemical vapor deposition using a mixture of ferrocene and xylene as the precursor, carbon nanotubes preferably grew on silicon substrates at areas implanted by xenon ions, leaving the unimplanted areas blank. This is due to the nanometer-scale (4–5nm) surface roughness induced by ion implantation and oxidation of the roughened surface during implantation and carbon nanotube growth. This study provides an alternative idea to predetermine the growth sites of nanotubes in fabricating arrays of aligned nanotubes on silicon substrates.
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