Direction-Selective and Length-Tunable In-Plane Growth of Carbon Nanotubes

A. Cao,R. Baskaran,M. J. Frederick,K. Turner,P. M. Ajayan,G. Ramanath
DOI: https://doi.org/10.1002/adma.200304738
IF: 29.4
2003-01-01
Advanced Materials
Abstract:Chemical vapor deposition on selectively masked SiO2 patterns has been used to obtain controlled placement and exclusive in-plane growth of length- and direction-tunable carbon nanotubes (see Figure and inside cover). Nanotube bridges interconnecting SiO2 patterns are fabricated, and their electrical characteristics are demonstrated. This approach holds promise for manufacturing large-scale microelectronic systems integrated with nanotube-electrode units.
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