Abstract:Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness which makes complex micromachining difficult. Photoelectrochemical etching is a simple, rapid means of wet processing SiC, including the use of dopant selective etch stops that take advantage of mature SiC homoepitaxy. However, dopant selective photoelectrochemical etching typically relies on highly doped material, which poses challenges for device applications such as quantum defects and photonics that benefit from low doping to produce robust emitter properties and high optical transparency. In this work, we develop a new, selective photoelectrochemical etching process that relies not on high doping but on the electrical depletion of a fabricated diode structure, allowing the selective etching of an n-doped substrate wafer versus an undoped epitaxial ($N_a=1(10)^{14}cm^{-3}$) device layer. We characterize the photo-response and photoelectrochemical etching behavior of the diode under bias and use those insights to suspend large ($>100\mu m^2$) undoped membranes of SiC. We further characterize the compatibility of membranes with quantum emitters, performing comparative spin spectroscopy between undoped and highly doped membrane structures, finding the use of undoped material improves ensemble spin lifetime by $>3x$. This work enables the fabrication of high-purity suspended thin films suitable for scalable photonics, mechanics, and quantum technologies in SiC.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to solve the challenges encountered in the preparation of undoped optical thin films in 4H - SiC (silicon carbide) materials by selective photochemical etching (PEC). Specifically, the paper addresses the following two main problems: 1. **The influence of high doping concentration on device performance**: - In the traditional photochemical etching process, in order to achieve selective etching, materials with high doping concentrations are usually required. However, high doping concentrations will introduce free - carrier absorption and charge noise, resulting in an increase in optical propagation loss and limiting the qubit spin coherence time. This is particularly disadvantageous for quantum defect and photonics applications. - The paper proposes a new selective photochemical etching method, which relies on the electrical depletion effect of the diode structure instead of high doping concentration, so that selective etching can be achieved while maintaining low doping. 2. **Preparation of high - quality, low - surface - roughness thin films**: - Due to its chemical inertness, complex micromachining of silicon carbide is very difficult. Existing etching methods such as SmartCut, grinding and polishing, and deep back - side etching can produce high - quality devices, but are usually limited by factors such as wafer non - uniformity, yield, excessive strain, and charge noise. - The paper shows how to prepare undoped silicon carbide thin films with a large area (> 100µm²) and low surface roughness (∼1nm RMS) through the new selective photochemical etching method. These thin films have higher optical transparency and longer spin coherence time, and are suitable for scalable photonics, mechanics, and quantum technologies. ### Main contributions - **New selective etching method**: A selective photochemical etching method based on the electrical depletion effect has been developed, which can achieve selective etching under low - doping conditions and avoid the negative effects brought by high doping. - **Improved device performance**: By comparing the quantum spin performance in the doped and undoped layers, it is found that the undoped layer can significantly increase the spin lifetime (> 3 times), and reduce strain and inhomogeneous broadening. - **Wide applicability**: This method is not only applicable to silicon carbide, but may also be applicable to other difficult - to - dope material systems, such as diamond, providing a new approach for selective etching. ### Conclusion Through this method, researchers can reliably suspend large - area undoped silicon carbide thin films. These thin films have lower surface roughness and a better charge - noise environment, and are suitable for carrying quantum emitters. This opens up new opportunities for applications such as nano - mechanical oscillators and other integrated quantum emitters.

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