Abstract:Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide.

Broadband single-mode planar waveguides in monolithic 4H-SiC

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

High-Q Antisymmetric Multimode Nanobeam Photonic Crystal Cavities in Silicon Waveguides

Silicon Carbide photonic platform based on suspended subwavelength waveguides

Broadband and High-Performance Devices for the Silicon and Silicon-Nitride Platforms

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Design and Characterization of Line-Defected Silicon Waveguide and High-Q Optical Cavity

Modeling and Characterization of Tunable Photonic Crystal Waveguides Based on Two-Dimensional Periodic Arrays of Silicon Pillars

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Wafer-Scale Integration of Freestanding Photonic Devices with Color Centers in Silicon Carbide

Precise characterization of a silicon carbide waveguide fiber interface

Quantum photonics in triangular-cross-section nanodevices in silicon carbide

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

Optical and strain stabilization of point defects in silicon carbide