Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Crater-shaped Enrichment of $\mathrm{V}_\mathrm{Si}$ Color Centers in $4H$-SiC using Single-Pulse Near-Infrared Femtosecond Laser Processing

Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide

Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing

Laser writing of scalable single colour centre in silicon carbide

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Laser-induced color centers in crystals

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Effects of localized laser-induced heating in the photoluminescence of silicon-vacancy color centers in 4H-SiC

Modeling of excimer laser ablation of silicon carbide

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers