Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing

Crater-shaped Enrichment of $\mathrm{V}_\mathrm{Si}$ Color Centers in $4H$-SiC using Single-Pulse Near-Infrared Femtosecond Laser Processing

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

Optical and strain stabilization of point defects in silicon carbide

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Fabrication and quantum sensing of spin defects in silicon carbide

Molecular dynamics simulation of W Silicon Emitting Centers formation by Ga ion implantation

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Nanoscale Depth Control of Implanted Shallow Silicon Vacancies in Silicon Carbide

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Creation of color centers in diamond by recoil implantation through dielectric films

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon