Abstract:We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

Laser-induced color centers in crystals

Photonic-Cavity-Enhanced Laser Writing of Color Centers in Diamond

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Photoactivation of color centers induced by laser irradiation in ion-implanted diamond

Preparations and applications of single color centers in diamond

Tailoring of Typical Color Centers in Diamond for Photonics

Creation of color centers in diamond by recoil implantation through dielectric films

Crater-shaped Enrichment of $\mathrm{V}_\mathrm{Si}$ Color Centers in $4H$-SiC using Single-Pulse Near-Infrared Femtosecond Laser Processing

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

Space-Selective Color Centers Formation by the Irradiation of Near Infrared Ultra-Fast Intense Laser in LiF Crystal

Laser Activation of Single Group-IV Colour Centres in Diamond

Hybrid quantum nanophotonic devices with color centers in nanodiamonds

Single Color Centers Implanted in Diamond Nanostructures

A new, enhanced diamond single photon emitter in the near infra-red

Laser writing of coherent colour centres in diamond

Space-selective laser function defects induced by ultra-fast intense laser in LiF crystal

Research Progress on Silicon Vacancy Color Centers in Diamond

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

Bright Near-Surface Silicon Vacancy Centers in Diamond Fabricated by Femtosecond Laser Ablation

Room-temperature self-cavity lasing from organic color centers