Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Defect Control Based on Constitutional Supercooling Effect in Cast Multicrystalline Silicon: Boron-indium Co-Doping

(Invited) Defects in Cast-Mono Crystalline Silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Defects in nitrogen-doped multicrystalline silicon

Control of Dislocation Clusters by Artificially-Introduced Micro-Twins in Cast-Mono Silicon

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Recombination Activity Of Sigma 3 Boundaries In Boron-Doped Multicrystalline Silicon: Influence Of Iron Contamination

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Characterization of P-Type Multicrystalline Silicon Prepared by Cold Crucible Continuous Melting and Directional Solidification

Structure Characteristic and Defects Controlling in Cold Crucible Directional Solidification of Multicrystalline Silicon for Solar cells

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Controllable Nitrogen Doping in Multicrystalline Silicon by Casting under Low Cost Ambient Nitrogen

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study