Abstract:Key properties of nanocrystals are determined by their real atomic structure, therefore a reasonable understanding and meaningful interpretation of their properties requires a realistic model of the structure. In this paper we present an evidence of a complex response of the lattice distances to external pressure indicating a presence of a complex structure of Sic nanopowders. The experiments were performed on nanocrystalline Sic subjected to hydrostatic or isostatic pressure using synchrotron and neutron powder diffraction. Elastic properties of the samples were examined based on X-ray diffraction data using a Diamond Anvil Cell (DAC) in HASYLAB at DESY. The dependence'of the lattice parameters and of the Bragg reflections width with pressure exhibits a ha1 nature of the properties (compressibilities) of the powders and indicates a complex structure of the grains. We interpreted tws behaviour as originating from different elastic properties of the grain interior and surface. Analysis of the dependence of individual interatomic distances on pressure was based on in-situ neutron diffraction measurements done with HbD diffractometer at LANSCE in Los Alamos National Laboratory with the Paris-Edinburgh cell under pressures up to 8 GPa (Qmax = 26/A). Interatomic distances were obtained by PDF analysis using the PDFgetN program. We have found that the interatomic distances undergo a complex, non-monotonic changes. Even under substantial pressures a considerable relaxation of the lattice may take place: some interatomic distances increase with an increase in pressure. We relate this phenomenon to: (1), changes of the microstructure of the densified material, in particular breaking of its fractal chain structure and, (2), its complex structure resembling that of a material composed of two phases, each with its distinct elastic properties.

Influence of High Pressure on the Threshold Displacement Energies in Silicon Carbide: A Car–Parrinello Molecular Dynamics Approach

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Effect of Uniaxial Stress on the Threshold Displacement Energy of Silicon Carbide

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Effect of Hexagonality on the Pressure-Dependent Lattice Dynamics of 4H-Sic

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Micro-characterisation of Si wafers by high-pressure thermopower technique

Pressure-Induced Changes on The Electronic Structure and Electron Topology in the Direct FCC → SH Transformation of Silicon

Unraveling the Atomic-Scale Pathways Driving Pressure-Induced Phase Transitions in Silicon

Multi-scale investigation of the mechanical-structural hallmarks of cubic-silicon-carbide under elevated pressures: Hirshfeld topological surfaces-first principles synergic approach

Primary Radiation Damage in 3C-Sic under Strain Field Studied with Molecular Dynamics Simulation

Examination of the Atomic Pair Distribution Function (PDF) of SiC Nanocrystals by In-situ High Pressure Diffraction

Theoretical prediction of structural, elastic and thermodynamic properties of transition metal monosilicides CrSi, TiSi and ZrSi under high pressure

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

High Pressure Structural Behavior of Silicon Telluride (Si2Te3) Nanoplates

Simultaneous Fine-Tuning of Hirshfeld Topological Surfaces, Volumes, and their Voids to Optimize the Radiation Shielding Properties: A Case Study of Silicon Carbide (SiC)

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Unveiling hole-facilitated amorphisation in pressure-induced phase transformation of silicon

Crystalline-amorphization-recrystallization Structural Transition and Emergent Superconductivity in Van Der Waals Semiconductor SiP under Compression