Abstract:We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n(+)-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n(+)-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x <= 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Light Emission from A-Sin:O Light-Emitting Diodes

Strong Green-Yellow Electroluminescence From Oxidized Amorphous Silicon Nitride Light-Emitting Devices

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Oxygen Induced Strong Green Light Emission From Low-Temperature Grown Amorphous Silicon Nitride Films

Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

Strong Green Light Emission from Low-Temperature Grown A-Sinx:H Film after Different Oxidation Routes

Low Turn-on and High Efficient Oxidized Amorphous Silicon Nitride Light-Emitting Devices Induced by High Density Amorphous Silicon Nanoparticles

Enhanced Electroluminescence Efficiency of Oxidized Amorphous Silicon Nitride Light-Emitting Devices by Modulating Si∕N Ratio

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Intense green light emission from low temperature grown SiNO complex system

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Electroluminescence of SnO2∕p-Si heterojunction

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Strong Blue Light Emission from A-Sinx:O Films Via Localized Surface Plasmon Enhancement