Intense green light emission from low temperature grown SiNO complex system

Dong, Hengping,Rui Huang,Danqing Wang,Chen, Kunji,Wei Li,Zhongyuan Ma,Jun Xu,XinFan Huang
DOI: https://doi.org/10.1109/GROUP4.2008.4638130
2008-01-01
Abstract:We report intense green photoluminescence from amorphous oxidized silicon nitride film (a-SiN:O). A-SiN:O light-emitting devices of green-yellow color are successfully fabricated. Notably, EL efficiency can be significantly enhanced by modulating Si/N ratio in luminescent active layer.
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