Abstract:Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05-2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width E-U) but also created N-Si-O (N-x) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (E-PL) is independent of the excitation energy (E-exc) and the PL intensity (I-PL) is regardless of the optical band gap (E-opt) but is proportional to the N-x defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the E-PL is proportional to E-exc (when E-exc <= E-opt) and the I-PL is dependent on the relative position of E-exc and E-opt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films. (C) 2015 AIP Publishing LLC.

Luminescence properties of oxidized Si-rich amorphous silicon nitride films

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices

A New Luminescent Defect State in Low Temperature Grown Amorphous SiNxOy Thin Films

Intense green light emission from low temperature grown SiNO complex system

Strong Green-Yellow Electroluminescence From Oxidized Amorphous Silicon Nitride Light-Emitting Devices

Low Turn-on and High Efficient Oxidized Amorphous Silicon Nitride Light-Emitting Devices Induced by High Density Amorphous Silicon Nanoparticles

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Oxygen Induced Strong Green Light Emission From Low-Temperature Grown Amorphous Silicon Nitride Films

Strong Green Light Emission from Low-Temperature Grown A-Sinx:H Film after Different Oxidation Routes

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Enhanced Electroluminescence Efficiency of Oxidized Amorphous Silicon Nitride Light-Emitting Devices by Modulating Si∕N Ratio

Photoluminescence from silicon-based SiNxOy:C+ films

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

The Role Of N-Si-O Bonding Configurations In Tunable Photoluminescence Of Oxygenated Amorphous Silicon Nitride Films

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films