Abstract:Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the electron selectivity and valance band offset at this heterointerface. Understanding of the atomic and electronic properties of the GaInP/AlInP heterointerface is crucial for the reduction of photocurrent losses in III-V multijunction devices. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). To mimic an in-situ interface experiment with in-situ stepwise deposition of the contact material, 1 nm - 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. We observed (2x2)/c(4x2) low-energy electron diffraction patterns with characteristic diffuse streaks along the [01-1] direction due to P-P dimers on both AlInP(100) and GaInP(100) as-prepared surfaces. Atomic composition analysis confirmed P-rich termination on both surfaces. Angle-resolved XPS measurements revealed a surface core level shift of 0.9 eV in P 2p peaks and the absence of interface core level shifts. We assigned the surface chemical shift in the P2p spectrum to P-P bonds on a surface. We found an upward surface band bending on the (2x2)/c(4x2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset of 0.2 eV was derived by XPS and band alignment diagram models for the n-n junctions were suggested.

Determination of the Surface Band Bending in in X Ga1-x N Films by Hard X-Ray Photoemission Spectroscopy.

Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1− x N films

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Accurate Surface Band Bending Determination on Ga-polar N-Type GaN Films by Fitting X-Ray Valence Band Photoemission Spectrum

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Luminescence Properties of InxGa1−xN (x∼ 0.04) Films Grown by Metal Organic Vapour Phase Epitaxy

Alloy Composition Fluctuation And Band Edge Energy Structure Of In-Rich Inxga1-Xn Layers Investigated By Systematic Spectroscopy

Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

In Adlayers on C-Plane Inn Surfaces: A Polarity-Dependent Study by X-Ray Photoemission Spectroscopy

Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering

Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS

Determination of the Branch-Point Energy of InN: Chemical Trends in Common-Cation and Common-Anion Semiconductors

Electronic Structure of Gainn Semiconductors Investigated by X-Ray Absorption Spectroscopy

Small Band Gap Bowing In In1-Xgaxn Alloys

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Electronic Structures and Optical Properties of Ga-Rich InxGa1−xN Nanotubes

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

The Influence of Conduction Band Plasmons on Core-Level Photoemission Spectra of Inn

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction