Abstract:We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Surface Electronic Properties of Undoped Inaln Alloys

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1− x N films

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Surface States of Inaln Film Grown by Mocvd

In Adlayers on C-Plane Inn Surfaces: A Polarity-Dependent Study by X-Ray Photoemission Spectroscopy

Transition Energies and Bowing Parameters for In-rich InGaN and InAlN Alloys

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

Indium Compositional Homogeneity in In$_{0.17}$Al$_{0.83}$N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Substrate temperature induced physical property variation of InxAl1-xN alloys prepared on Al2O3 by magnetron sputtering

Native Defects in InxGa1−xN Alloys

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations

Universality of Electron Accumulation at Wurtzite C- and A-Plane and Zinc-Blende InN Surfaces

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Electron Accumulation at Inn/Aln and Inn/Gan Interfaces

Two-Dimensional III-Nitride Alloys: Electronic and Chemical Properties of Monolayer Ga(1-x)AlxN