Abstract:The authors investigated the combined influences of substrate temperature and methods for preparing underlying Mo electrodes on the crystallinity, morphology, and electrical properties of AlN films using x-ray diffraction, scanning electron microscopy, and a network analyzer, respectively. The substrate temperature of the AlN films was varied from 20°C to 600°C. The underlying Mo electrodes were deposited by direct-current (DC) and radiofrequency (RF) sputtering techniques. A change in the AlN crystallites varied with the substrate temperature and differed for DC- and RF-sputtered Mo bottom electrodes. With increasing substrate temperature, the preferred orientation of AlN films on DC-sputtered Mo bottom electrodes varied from the \( \left( {10\overline{1} 0} \right) \) orientation to the (0002) orientation. The \( \left( {10\overline{1} 0} \right) \) orientation did not appear in the AlN films on RF-sputtered Mo bottom electrodes at low substrate temperature (20°C). The optimum substrate temperature for depositing (0002)-oriented AlN on Mo films was 400°C. At this substrate temperature, AlN films deposited on RF-sputtered Mo bottom electrodes exhibited better crystalline quality and greater frequency response with only one resonance peak compared with DC-sputtered Mo bottom electrodes. The cause of these phenomena is also discussed.

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