Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

A Study on a Two-Step Technique of Growing Ga2O3/ZnO Films Ammoniated at Different Temperatures

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

Effect of Ammoniating Temperature on the Quality of GaN Nanostructures on Si Substrates

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Effects of Ga doped seed layer on microstructural and optical properties of ZnO nanorods

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Investigation of the Reaction Time and the Process of Synthesis of Gan Nanopowders by Ammoniating Ga2o3

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Investigations of the growth and physical characteristics of ZNF2-DOPED GA2O3 thin films

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Effects of Growth Temperature on Properties of Nonpolar A-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition