Abstract:The strong piezoelectric field present in InGaN/GaN heterostructure quantum wells severely reduces the light emission efficiency of multiple quantum well (MQW) structures. To address this issue, a strain modulation interlayer is commonly used to mitigate the piezoelectric polarization field and improve the luminescence performance of the devices. To investigate the impact and mechanism of strain modulation in the InGaN/GaN superlattice (SL), epitaxial wafers were fabricated with an n-type InGaN/GaN SL interlayer sample, along with a corresponding control sample. By measuring the temperature-dependent photoluminescence (PL) spectra of the epitaxial wafers, experimental results show that the introduction of an SL interlayer leads to a shorter emission wavelength and an enhanced internal quantum efficiency. As the temperature increases, a blue shift of the PL peak is observed. However, for the sample with an SL interlayer, the blue shift of the PL peak with temperature is relatively small. Electroluminescence (EL) experiments indicate that the introduction of an SL interlayer significantly increases the integrated intensity of the EL peak and reduces its full width at half maximum. These phenomena collectively suggest that the incorporation of a superlattice interlayer can partially suppress the quantum-confined Stark effect (QCSE) that affects the light emission efficiency. Theoretical calculations demonstrated that the introduction of a superlattice strain layer before the growth of the multiple quantum well active region can weaken the polarization-induced built-in electric field, reduce the tilt of the energy bands in the multiple quantum well active region, increase the overlap of electron and hole wave functions, enhance the emission probability, shorten the radiative recombination lifetime, and promote competition between radiative and non-radiative recombination, thereby achieving higher recombination efficiency and improved light emission intensity. This study provides experimental and theoretical evidence that the strain modulation SL interlayer can effectively improve the device performance and offer guidance for optimizing the structural design of devices.

Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

Role of an Ultra-Thin Aln/Gan Superlattice Interlayer on the Strain Engineering of Gan Films Grown on Si(110) and Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Growth and characterization of AlInN/GaN superlattices

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Study on the strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Formation of M-Plane Ingan/Gan Quantum Dots Using Strain Engineering of Algan/Aln Interlayers

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Elastic strain in InGaN and AlGaN layers