Abstract:High-Al-content AlxGa1-xN films with x varying from 0.33 to 0.79 were grown on GaN templates with the high temperature AIN (HT-AIN) interlayer by metal organic chemical vapor deposition (MOCVD). The best crystalline quality, among these AlxGa1-xN alloys, can be obtained for an AIN mole fraction x = 0.55, where the full-width at half-maximum of the Al0.55Ga0.45N (0002) diffraction peak was measured to be 259 arcsec by high resolution X-ray diffraction (HRXRD). The screw threading dislocation (TDs) density was 2 x 10(8) cm(-2) evaluated by transmission electron microscope (TEM), which agreed with the calculations from Williamson-Hall plots. Moreover, cross-sectional TEM indicated that the HT-AIN interlayer could sufficiently reduce the threading dislocations (TDs) through generation of V trenches in the HT-AIN interlayer, since the TDs propagated along the V trenches, then bent into basal planes and annihilated with other dislocations. The study of optical properties indicated that obvious S-shape of temperature dependence on emission energy was observed for Al0.55Ga0.45N layers, which was attributed to exciton localization with energy (E-IOC) similar to 14.95 meV at 10 K resulting from potential fluctuation and band tail states. The time-resolved photoluminescence (TRPL) curves showed a bi-exponential decay at low temperature. The fast decay time implied the presence of the localized excitons enhancing radiative recombination, while the quite slow one was due to the dominance of trapping mechanisms originating from cation vacancy complexes and the V-III-related complexes. (C) 2016 Elsevier Ltd. All rights reserved.

Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Growth of High Al Content AlGaN Epilayer by MOCVD

Synthesis of high Al content Al x Ga 1− x N ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Growth and Characterization of Algan/Gan Superlattices

Compositional Modulation and Optical Emission in AlGaN Epitaxial Films

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Spontaneous Compositional Superlattice And Band-Gap Reduction In Si-Doped Alxga1-Xn Epilayers

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films