Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

The Influence of Underlying Layer on Morphology of InGaN Quantum Dots Self‐assembled by Metal Organic Vapor Phase Epitaxy

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Size-dependent Optical Properties of InGaN Quantum Dots in GaN Nanowires Grown by MBE

Density Increase of Upper Quantum Dots in Dual Ingan Quantum-Dot Layers

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Growth and Property of Surface Stress Induced InGaN Quantum Dots

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices