Abstract:The lack of internal polarization fields in cubic group-III nitrides makes them promising arsenic-free contenders for next-generation high-performance electronic and optoelectronic applications. In particular, cubic InxGa1-xN semiconductor alloys promise band gap tuning across and beyond the visible spectrum, from the near-ultraviolet to the near-infrared. However, realization across the complete composition range has been deemed impossible due to a miscibility gap corresponding to the amber spectral range. In this study, we use plasma-assisted molecular beam epitaxy (PAMBE) to fabricate cubic InxGa1-xN films on c-GaN/AlN/3C-SiC/Si template substrates that overcome this challenge by careful adjustment of the growth conditions, conclusively closing the miscibility gap. X-ray diffraction reveals the composition, phase purity, and strain properties of the InxGa1-xN films. Scanning transmission electron microscopy reveals a CuPt-type ordering on the atomistic scale in highly alloyed films with x(In) ≈ 0.5. Layers with much lower and much higher indium content exhibit statistical distributions of the cations Ga and In. Notably, this CuPt-type ordering results in a spectrally narrower emission compared to that of statistically disordered zincblende materials. The emission energies of the films range from 3.24 to 0.69 eV and feature a quadratic bowing parameter of b = 2.4 eV. In contrast, the LO-like phonon modes that are observed by Raman spectroscopy exhibit a one-mode behavior and shift linearly from c-GaN to c-InN.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Study of InGaN Films Grown by MOCVD

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer

Influence of GaN Buffer Layer for InN Growth

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Effects of InGaN-interlayer on Closed Stripes of GaN Grown by Serpentine Channel Patterned Sapphire Substrate

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Cathodoluminescence Study of InGaN/GaN Thin Film

Surfactant Antimony enhanced Indium incorporation on InGaN (000-1) surface: a DFT study

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage