Abstract:The effects of postgrowth rapid thermal annealing on the electronic states in a relatively long wavelength (similar to 1.3 mu m), self-assembled InAs/GaAs quantum-dot structure are investigated. We combine optical and electrical experiments, i.e., photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements, to identify the underlying physical processes responsible for the changes in the PL spectra at different annealing temperatures. Physical parameters of the intrinsic and deep-level states are quantitatively determined in the DLTS experiments. These include the thermal excitation energies, densities, and their changes with the annealing temperature. We observe that the densities of the deep levels that coexist in the quantum-dot layer decrease and a new deep level, about 0.62 eV below the GaAs conduction band edge, is formed at elevated temperatures. Both effects explain the variations in the PL spectra. Moreover, beyond what can be revealed in the PL experiments, the DLTS spectra show a more complex electronic structure of both optically active and inactive states. (c) 2006 American Institute of Physics.

Annealing Effect of the InAs Dot-in-well Structure Grown by MBE

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Effect of Rapid Thermal Annealing on Electron Emission and DX Centers in Strained InGaAs/GaAs Single Quantum Well Laser Diodes

Combined Optical And Electrical Studies Of The Effects Of Annealing On The Intrinsic States And Deep Levels In A Self-Assembled Inas Quantum-Dot Structure

Annealing Effects on Optical and Structural Properties of 1.3-Μm GaInNAs/GaAs Quantum-Well Samples Capped with Dielectric Layers

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Post-growth and <i>in situ</i> annealing on GaInNAs(Sb) and their application in 1.55 µm lasers

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Evolution of Interfacial Properties with Annealing in InAs/GaSb Superlattice Probed by Infrared Photoluminescence

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Arsenic/phosphorus Exchange and Wavelength Tuning of in Situ Annealed InAs/InP Quantum Dot Superlattice

Annealing of Self-Assembled InAs/GaAs Quantum Dots: A Stabilizing Effect of Beryllium Doping

Photoluminescence and Lasing Properties of InAs/GaAs Quantum Dots Grown by Metal-Organic Chemical Vapour Deposition

Analysing Radiative and Non-Radiative Recombination in InAs Quantum Dots Grown on Si Substrates for Integrated Laser Applications

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice

In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells