Abstract:We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30–39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface “bright spots” appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 μm, which can be used for mid-wave infrared (MWIR) detection.

Evolution of Interfacial Properties with Annealing in InAs/GaSb Superlattice Probed by Infrared Photoluminescence

Annealing-induced Interfacial Atomic Intermixing in InAs/GaSb Type II Superlattices

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Annealing Effects on Optical and Structural Properties of 1.3-Μm GaInNAs/GaAs Quantum-Well Samples Capped with Dielectric Layers

Combined Optical And Electrical Studies Of The Effects Of Annealing On The Intrinsic States And Deep Levels In A Self-Assembled Inas Quantum-Dot Structure

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Annealing Effect of the InAs Dot-in-well Structure Grown by MBE

Interface Effect on Superlattice Quality and Optical Properties of InAs/GaSb Type-Ii Superlattices Grown by Molecular Beam Epitaxy

Temperature-dependent Photoluminescence of the InAs-based and GaSb-based Type-Ii Superlattices

Effects of Rapid Thermal Annealing on Self-Assembled InGaAs/GaAs Quantum Dots Superlattice

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

Interdiffusion of GaInNAs∕GaAs Laser Structures

InAs/InAsSb Type-Ii Superlattice with Near Room-Temperature Long-Wave Emission Through Interface Engineering

Thermally Induced Native Defect Transform in Annealed GaSb

In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Growth Control of High-Performance InAs/GaSb Type-II Superlattices Via Optimizing the In/Ga Beam-Equivalent Pressure Ratio

Evaluating Interface Roughness and Micro-Fluctuation Potential of InAs/GaSb Superlattices by Mid-Infrared Magnetophotoluminescence

Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors