Abstract:This paper presents work on InAs/GaSb superlattice structural property studies. The superlattice materials were grown by molecular beam epitaxy and measured by high resolution x-ray diffraction, and measured x-ray rocking curves were fitted to the simulated ones in order to fully analyze the superlattice structures. A four-layer model including an InAs layer, a GaSb layer and two interface layers was used for simulation. The results show that the two interface layers are ternary compounds of InSbAs, which have, respectively, an Sb composition of 0.99 at the InAs-on-GaSb interfaces and an Sb composition of 0.01 at the GaSb-on-InAs interfaces. This is the first article, to our knowledge, on the detailed analysis of the InAs/GaSb superlattice interface structures. The experiments also demonstrate that the As flux during the epitaxy growth affects the interface layer InSbAs compositions and hence the lattice mismatch between the superlattices and the substrates. With an As beam equivalent pressure change from 1 × 10−5 to 3 × 10−6 Torr, the lattice mismatch decreases from 3.2 × 10−3 to 5 × 10−4. Measurements on and analysis of Bragg peak broadening under different diffraction geometries show that the broadening depends on both the superlattice period and the lattice mismatch.

Annealing-induced Interfacial Atomic Intermixing in InAs/GaSb Type II Superlattices

Evolution of Interfacial Properties with Annealing in InAs/GaSb Superlattice Probed by Infrared Photoluminescence

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Atomic Intermixing and Segregation at the Interface of InAs/GaSb Type II Superlattices

Effect of Rapid Thermal Annealing on the Optical Properties of GaAsSb Alloys

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Optical Characteristics of GaAsSb Alloy after Rapid Thermal Annealing

Effects of Rapid Thermal Annealing on Self-Assembled InGaAs/GaAs Quantum Dots Superlattice

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Thermal Relaxation Behaviour of As in Supersaturated Si Studied by Channeling, Hall Effect Measurements and Transmission Electron Microscopy

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Metal Organic Chemical Vapor Deposition Growth and Characterization of Inas/Gasb Type-Ii Superlattices on Gaas (001) Substrates

Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique

Effect of an In-Situ Thermal Annealing on the Structural Properties of Self-Assembled Gasb/Gaas Quantum Dots

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Rapid Thermal Annealing of Arsenic Implanted Si1−xGex Epilayers

Thermal Annealing Effect on Low-Temperature Molecular-Beam Epitaxy-Grown Gaas - Arsenic Precipitation and the Change of Resistivity