Abstract:Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.

Analysing Radiative and Non-Radiative Recombination in InAs Quantum Dots Grown on Si Substrates for Integrated Laser Applications

Analysing Radiative and Non-Radiative Recombination in Inas Qds on Si for Integrated Laser Applications

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Optimisation of the Dislocation Filter Layers in 1.3‐μm InAs/GaAs Quantum‐dot Lasers Monolithically Grown on Si Substrates

InAs/GaAs Quantum-Dot Lasers Grown on On-Axis Si (001) Without Dislocation Filter Layers

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Gradual degradation in InAs quantum dot lasers on Si and GaAs

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon

13 Μm InAs/GaAs Quantum Dot Lasers on Silicon with GaInP Upper Cladding Layers

Annealing Effect of the InAs Dot-in-well Structure Grown by MBE

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

Photoluminescence and Lasing Properties of InAs/GaAs Quantum Dots Grown by Metal-Organic Chemical Vapour Deposition

Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates

Optimizations of Defect Filter Layers for 1.3-Μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate