Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Optimizations of Defect Filter Layers for 1.3-Μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

Optimisation of the Dislocation Filter Layers in 1.3‐μm InAs/GaAs Quantum‐dot Lasers Monolithically Grown on Si Substrates

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

Optimising the Defect Filter Layer Design for Iii/V Qds on Si for Integrated Laser Applications

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

Optimization of 1.3 Μm InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon: Taking the Optical Loss of Metamorphic Epilayers into Account

Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

1.3 Μm InAs/GaAs Quantum‐dot Laser Monolithically Grown on Si Substrates Operating over 100°C

Gradual degradation in InAs quantum dot lasers on Si and GaAs

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Tunable Quantum Dot Lasers Grown Directly on Silicon

Theoretical Analysis and Modelling of Degradation for III–V Lasers on Si

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

Multi-wavelength DFB Laser Array in InAs/GaAs Quantum Dot Material Epitaxially Grown on Silicon

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.