Abstract:Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 ae m InAs/GaAs quantum dot (QD) laser that lases up to 111 degrees C, with a low threshold current density of 200 A/cm(2) and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at similar to 1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates.

1.3 Μm InAs/GaAs Quantum‐dot Laser Monolithically Grown on Si Substrates Operating over 100°C

Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

Optimisation of 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

13 Μm InAs/GaAs Quantum Dot Lasers on Silicon with GaInP Upper Cladding Layers

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Optimisation of the Dislocation Filter Layers in 1.3‐μm InAs/GaAs Quantum‐dot Lasers Monolithically Grown on Si Substrates

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

High Performance Self-Organized Ingaas Quantum Dot Lasers on Silicon

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

High Performance Self-Organized In(Ga)As Quantum Dot Lasers Monolithically Grown on Silicon

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

25 Gb/s Directly Modulated Ground-State Operation of 1.3 Μm InAs/GaAs Quantum Dot Lasers Up to 75°C

Low-noise 13 Μm InAs/GaAs Quantum Dot Laser Monolithically Grown on Silicon

Highly Reliable Quantum Dot Laser Directly Grown on CMOS Compatible Si (001) Substrate

Extremely Low Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers